• DocumentCode
    3503778
  • Title

    Field emission display using nanowire field emitters

  • Author

    Xu, N.S. ; Chen, Jun ; Deng, S.Z.

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Summary form only given. Field emission display (FED) has advatanges in brightness, power consumption, color rendition, response time and operating temperature range. Early prototypes of triode-structured FED using Spindt-cathode were expensive to manufacture in large area. Using self-assembled one-dimensional nanomaterials such as carbon nanotubes (CNTs) and nanowires is a solution to this problem. The nanowire field emitters have the additional advantages of include better controlled electrical properties, feasibility of large area preparation and good field emission properties. In present talk, the recent results from our group about nanowire field emitters FED will be introduced. We prepared several one-dimensional nanowire emitters with excellent field emission performance. We also investigated a number of designs of gated microstructures and technical approaches for self-assembling nanowires inside these microstructures. Prototype field emission display devices have been fabricated. The results demonstrate the feasibility of large-area high-definition nanowire field emission display.
  • Keywords
    cathodes; field emission displays; microassembling; nanowires; triodes; CNT; carbon nanotube; color rendition; electrical property; gated microstructure design; high-definition nanowire field emission display; one-dimensional nanowire field emitter; operating temperature range; power consumption; self-assembled one-dimensional nanomaterial; spindt-cathode; triode-structured FED; Brightness; Educational institutions; Materials; Microstructure; Prototypes; Self-assembly; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316860
  • Filename
    6316860