DocumentCode
3503788
Title
An 0.5 μm BiCMOS technology for low power wireless telecommunications applications
Author
Blair, C. ; Luk, T. ; Darmawan, J. ; Bien, D.
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
1996
fDate
29 Sep-1 Oct 1996
Firstpage
126
Lastpage
129
Abstract
This paper reports a new 0.5 μm BiCMOS technology designed for low voltage 2.5 GHz wireless telecommunications applications. The process utilizes a novel emitter configuration referred to as a three sided emitter which enhances performance by reducing base resistance
Keywords
BiCMOS integrated circuits; integrated circuit technology; radio equipment; 0.5 micron; 2.5 GHz; BiCMOS technology; base resistance; low power wireless telecommunications; three sided emitter; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Electrodes; Isolation technology; Lithography; Manufacturing; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3516-3
Type
conf
DOI
10.1109/BIPOL.1996.554624
Filename
554624
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