Title :
An 0.5 μm BiCMOS technology for low power wireless telecommunications applications
Author :
Blair, C. ; Luk, T. ; Darmawan, J. ; Bien, D.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
This paper reports a new 0.5 μm BiCMOS technology designed for low voltage 2.5 GHz wireless telecommunications applications. The process utilizes a novel emitter configuration referred to as a three sided emitter which enhances performance by reducing base resistance
Keywords :
BiCMOS integrated circuits; integrated circuit technology; radio equipment; 0.5 micron; 2.5 GHz; BiCMOS technology; base resistance; low power wireless telecommunications; three sided emitter; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Electrodes; Isolation technology; Lithography; Manufacturing; Silicon; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554624
