An equivalent model of TSV silicon interposer

Author

An Tong ; Qin Fei ; Wu Wei ; Yu Daquan ; Wan Lixi ; Wang Jun

Author_Institution

Coll. of Mech. Eng. & Appl. Electron. Technol., Beijing Univ. of Technol., Beijing, China

fYear

2012

fDate

13-16 Aug. 2012

Firstpage

583

Lastpage

587

Abstract

The silicon layer containing through silicon vias (TSVs) is considered as anisotropic fiber reinforced composite layer with different longitudinal and transversal properties. An analytical approach is presented to estimate the effective Young´s modulus, Poisson´s ratio and coefficient of thermal expansion (CTE) for composite layer. It shows that the TSVs have no significant influence on the deflection of silicon layer, and the model ignoring TSVs is capable to predict enough accurate deflection of silicon layer.

Keywords

Young´s modulus; elemental semiconductors; fibre reinforced composites; integrated circuit modelling; silicon; thermal expansion; three-dimensional integrated circuits; CTE; Poisson ratio; Si; TSV silicon interposer equivalent model; anisotropic fiber reinforced composite layer; coefficient of thermal expansion; effective Young´s modulus; longitudinal properties; silicon layer deflection; through silicon vias; transversal properties; Abstracts; Copper;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4673-1682-8

Electronic_ISBN

978-1-4673-1680-4

Type

conf

DOI

10.1109/ICEPT-HDP.2012.6474687

Filename

6474687