Title :
Design, fabrication and analysis of S-band MMIC power amplifier
Author :
Lee, Kwang Kyung ; An, Dan ; Rhee, Jin Koo ; Park, Hyun Chang ; Yoon, Yong Soon
Author_Institution :
Millimeter-wave Innovation Technol Res. Centre, Dongguk Univ., Seoul, South Korea
Abstract :
In this paper GaAs power MESFETs and a passive device library were developed, and used in the realization of an S-band MMIC power amplifier. The bonding line component was considered in the design of the amplifier. S21 and S11, were 30 dB and -13.8 dB, respectively, according to simulation. The amplifier was fabricated by a seven-mask process, and bonded to a test fixture. At the center frequency of 2.45 GHz, S21, and S11, were measured to be 29.6 dB and -15.0 dB, respectively. The chip size was 1.8 mm×0.9 mm
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; field effect MMIC; gallium arsenide; power MESFET; 2.45 GHz; GaAs; GaAs power MESFET; MMIC power amplifier; S-band; bonding line component; passive device library; seven-mask process; Bonding; Fabrication; Fixtures; Frequency; Gallium arsenide; Libraries; MESFETs; MMICs; Power amplifiers; Testing;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818588
