DocumentCode :
3503978
Title :
Nanodiamond vacuum field emission integrated devices
Author :
Kang, W.P. ; Hsu, S.H. ; Ghosh, N. ; Davidson, J.L. ; Huang, J.H. ; Kerns, D.V.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
The superb material properties of nanocrystalline diamond (nanodiamond) materials coupled with practical chemical vapor deposition (CVD) processing of deposited nitrogen-incorporated nanodiamond on variety of substrates, have promoted further interest in the use of these diamond-derived materials as electron field emitters. Experimentally, nanodiamond emitters have been observed to emit electrons at relatively low electric fields and generate useful current densities. In this work, recent development in nanodiamond vacuum field emission integrated electronic devices, viz., the nanodiamond triodes, transistors and integrated differential amplifiers are examined. The material properties, device structure and fabrication process, and the electrical performance of these devices are presented.
Keywords :
current density; diamond; differential amplifiers; electron field emission; nanoelectronics; transistors; triodes; vacuum microelectronics; current density; device fabrication process; device structure; diamond-derived materials; electron field emitters; integrated differential amplifiers; low electric field; nanodiamond emitters; nanodiamond triodes; nanodiamond vacuum field emission integrated electronic devices; superb material property; transistors; Cathodes; Differential amplifiers; Educational institutions; Logic gates; Materials; Nanoscale devices; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316869
Filename :
6316869
Link To Document :
بازگشت