Title :
Simulation and analysis on transient performance of VDMOS
Author :
Meng Qing-gang ; Li Bin
Author_Institution :
Coll. of Inf. & Commun. Eng., Heilongjiang Inst. of Technol., Harbin, China
Abstract :
VDMOS has the features of large input impedance, high switching speed and well heat stability. It has been applied widely to motor drive, switch power supply, automotive electronics and energy saving lamp and so on. Currently, the development of VDMOS in our country is still in the starting stage and the research on it is not mature. This paper aims to designing model and simulation study of VDMOS. About the design, it will be calculated from the formation and parameter. The dosage concentration of any parts of the device will be also devised on the basis of breakdown voltage that meets predicted design. Besides, the dynamic characteristics of VDMOS can be simulated through usage of MEDICI software.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device models; MEDICI software; VDMOS; automotive electronics; breakdown voltage; dosage concentration; energy saving lamp; high switching speed; motor drive; switch power supply; transient performance simulation; well heat stability; Electrodes; Epitaxial growth; Insulated gate bipolar transistors; Logic gates; Substrates; TV; Transient analysis; 650V; DMOS; MEDICI; Transient performance simulation;
Conference_Titel :
Measurement, Information and Control (ICMIC), 2013 International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-1390-9
DOI :
10.1109/MIC.2013.6758199
