Title :
Statical simulation and analysis on 650V VDMOS tubes
Author_Institution :
Coll. of Inf. & Commun. Eng., Heilongjiang Inst. of Technol., Harbin, China
Abstract :
Being one of mainstream products in power electronics field, VDMOS has the features of strong input impedance, high switching speed, well heat stability and wide safety operation area. It is widely used in various kinds of fields such as motor driving, switch power supply, automotive electronics, energy saving lamp and so on. In this thesis, through calculation and simulation, the best design of VDMOS can be found in order to meet requirement which the device has 650V of drain-source voltage. It will be mainly focused to simulate to breakdown voltage, I-V input characteristics and transfer characteristics about static characteristics. Satisfied result will be gained and it will also meet design requirement.
Keywords :
MOS integrated circuits; MOSFET; I-V input characteristics; MOS field effect transistor; MOSFET; VDMOS tubes; automotive electronics; breakdown voltage; drain-source voltage; energy saving lamp; motor driving; power electronics field; statical simulation; switch power supply; transfer characteristics; voltage 650 V; Electric breakdown; Electrodes; Electron tubes; Heating; 650V; MEDICI; Static simulation; VDMOS;
Conference_Titel :
Measurement, Information and Control (ICMIC), 2013 International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-1390-9
DOI :
10.1109/MIC.2013.6758200
