Title :
High performance single In2Se3 nanowire photodetector
Author :
Li, Qi ; Li, Yuhua ; Gao, J. ; Wang, S.D. ; Sun, X.H.
Author_Institution :
Jiangsu Key Lab. for Carbon-based Functional Mater. & Devices, Soochow Univ., Suzhou, China
Abstract :
The single In2Se3 nanowire photodetectors were fabricated and the performance characteristics of the NW devices were systematically investigated. The single In2Se3 NW photodetectors show high and stable photoresponse at wide light wavelength (254-800 nm) and temperature range (7-300 K). The spectra response curve indicates the absorption coefficient of the In2Se3 NWs at certain wavelength dominates the performance of the devices. The good linearity of the photocurrents with the incident irradiation over a wide wavelength range has been obtained, indicating the In2Se3 nanowire photodetector works under a typical light dependent resistor mode.
Keywords :
III-VI semiconductors; absorption coefficients; indium compounds; nanosensors; nanowires; photoconductivity; photodetectors; photoemission; photoresistors; semiconductor quantum wires; In2Se3; absorption coefficient; incident irradiation; photocurrent; photoresponse; single NW photodetector; single nanowire photodetector; spectra response curve; temperature 7 K to 300 K; typical light dependent resistor mode; wavelength 254 nm to 800 nm; wide light wavelength; Absorption; Nanoscale devices; Performance evaluation; Photoconductivity; Photodetectors; Sun; Temperature; In2Se3 nanowires; photodetector; photoresponse;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316875
