High performance single In2Se3 nanowire photodetector

Author

Li, Qi ; Li, Yuhua ; Gao, J. ; Wang, S.D. ; Sun, X.H.

Author_Institution

Jiangsu Key Lab. for Carbon-based Functional Mater. & Devices, Soochow Univ., Suzhou, China

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

The single In₂Se₃ nanowire photodetectors were fabricated and the performance characteristics of the NW devices were systematically investigated. The single In₂Se₃ NW photodetectors show high and stable photoresponse at wide light wavelength (254-800 nm) and temperature range (7-300 K). The spectra response curve indicates the absorption coefficient of the In₂Se₃ NWs at certain wavelength dominates the performance of the devices. The good linearity of the photocurrents with the incident irradiation over a wide wavelength range has been obtained, indicating the In₂Se₃ nanowire photodetector works under a typical light dependent resistor mode.

Keywords

III-VI semiconductors; absorption coefficients; indium compounds; nanosensors; nanowires; photoconductivity; photodetectors; photoemission; photoresistors; semiconductor quantum wires; In₂Se₃; absorption coefficient; incident irradiation; photocurrent; photoresponse; single NW photodetector; single nanowire photodetector; spectra response curve; temperature 7 K to 300 K; typical light dependent resistor mode; wavelength 254 nm to 800 nm; wide light wavelength; Absorption; Nanoscale devices; Performance evaluation; Photoconductivity; Photodetectors; Sun; Temperature; In2Se3 nanowires; photodetector; photoresponse;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316875

Filename

6316875