Title :
SiGe-technology and components for mobile communication systems
Author :
Schüppen, A. ; Dietrich, H. ; Gerlach, S. ; Höhnemann, H. ; Arndt, J. ; Seller, U. ; Götzfried, R. ; Erben, U. ; Schumacher, H.
Author_Institution :
Temic Telefunken Microelectron GmbH, Heilbronn, Germany
fDate :
29 Sep-1 Oct 1996
Abstract :
SiGe-HBTs offer the opportunity to build integrated front-ends for mobile communication systems above 1 GHz. SiGe-HBTs with 50 GHz fT and fmax were obtained by a production process including poly-silicon resistors, nitride capacitors and spiral inductors showing Q values up to 10. RF-noise figures down to 1 dB at 2 GHz with an associated gain of 14 dB and 1 Hz 1/f corner frequency were obtained. Class A load pull measurements on power SiGe-HBTs at 1.9 GHz exhibited a power added efficiency (PAE) of 44% at 1W RF output power. Power amplifiers, low noise amplifiers and mixer circuits are presently under investigation
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF mixers; UHF power amplifiers; integrated circuit measurement; mobile communication; semiconductor materials; 1 W; 1 dB; 1.9 GHz; 1/f corner frequency; 14 dB; 44 percent; Class A load pull measurements; Q values; RF output power; RF-noise figures; SiGe; integrated front-ends; low noise amplifiers; mixer circuits; mobile communication systems; nitride capacitors; polysilicon resistors; power HBTs; power added efficiency; power amplifiers; spiral inductors; Capacitors; Frequency; Gain; Inductors; Low-noise amplifiers; Mobile communication; Production; Radiofrequency amplifiers; Resistors; Spirals;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554626
