Title :
Cooling characteristic of field emission from metals and semiconductors
Author :
Kim, Y.K. ; Choi, J.Y. ; Kim, P.G. ; Chun, J.P. ; Chung, M.S.
Author_Institution :
Dept. of Phys., Univ. of Ulsan, Ulsan, South Korea
Abstract :
We have theoretically investigated the cooling effect of field emission from metals and n-type semiconductors. The potential energy was found as a function of the tip curvature and the emission distance. The use of the obtained potential leads to the calculation of the energy exchange as a function of two geometrical quantities. The cooling power needed for micro-electronic device is obtained for field emission from the highly n-doped Si semiconductor.
Keywords :
cooling; electron field emission; elemental semiconductors; silicon; Si; cooling characteristic; cooling effect; emission distance; field emission; metals; microelectronic device; n-type semiconductors; potential energy; tip curvature function; Cathodes; Cooling; Energy exchange; Heating; Metals; Potential energy; Silicon; Nottingham effect; cooling;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316881
