DocumentCode :
3504377
Title :
A novel shielding structure based on TSV 3D package
Author :
Jun Li ; Lixi Wan ; Liqiang Cao
Author_Institution :
Inst. of Microelectron., Beijing, China
fYear :
2012
fDate :
13-16 Aug. 2012
Firstpage :
691
Lastpage :
694
Abstract :
3D integration technology, especially TSV (Through Silicon Via) based 3D package is a feasible solution for high density and high performance system. The TSV provides a vertical interconnection with a much shorter electrical delay between dies. The EMI (Electromagnetic Interfere) issue draws great attention due to the short vertical distance between noise source circuit and sensitive circuit. In this paper, we proposed a novel shielding structure to suppress the space electromagnetic coupling for the 3D integration application. According to the simulation data, the insertion loss of the novel shielding structure is below -65dB from DC to 30GHz for wide band vertical shielding. The novel structure also provides a significant noise suppression performance for 2D electromagnetic coupling. The insertion loss between 2D noise and sensitive dies are below -60dB from DC to 40GHz.
Keywords :
electromagnetic interference; electromagnetic shielding; integrated circuit interconnections; integrated circuit packaging; three-dimensional integrated circuits; 2D electromagnetic coupling; 2D noise; 3D integration technology; EMI; TSV 3D package; electrical delay; electromagnetic interference; noise suppression performance; shielding structure; space electromagnetic coupling; vertical interconnection with; wide band vertical shielding; Conductors; Insertion loss; Metamaterials; Noise; Periodic structures; Silicon; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
Type :
conf
DOI :
10.1109/ICEPT-HDP.2012.6474712
Filename :
6474712
Link To Document :
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