RuO2 doped SnO2 thin film on tungsten tip and its field emission

Nanocrystalline RuO₂ doped SnO₂ thin film has been synthesized by thermal evaporation on tungsten tip. The surface morphology of the as deposited thin film on tungsten tip has been characterized by SEM. The SEM studies reveal the complete required to draw an emission current of 1nA was observed to be 2 kV. An emission current density of the order of 8.9 A/cm² has been obtained at an applied voltage of 7.5 kV. The Fowler-Nordheim plot show linear nature typically that of metal. The field enhancement factor estimated from the slope of F-N plot is 11260 cm^-1, indicating that the electron emission from nanometric features of the emitter. The current stability recorded at preset value of 1 A/cm² is observed to be promising with fluctuations less than 5 % of the stabilized current value. Our results on field emission from RuO₂:SnO₂ thin film on tungsten tip indicates that, it is a potential candidate for field emission based flat panel display devices, cold cathode electron sources, and in large area electronics devices.