Simulation and fabrication of AlGaAs/InGaAs/GaAs power PHEMT for MMIC applications at 35 GHz

Author

Lee, Seong Dae ; Heo, Jong Gon ; Yang, Seong Hwan ; Rhee, Jin Koo

Author_Institution

Dept. of Electron. Eng., Dongguk Univ., Seoul, South Korea

Volume

2

fYear

1999

fDate

36495

Firstpage

1117

Abstract

In this paper, AlGaAs/InGaAs/GaAs power PHEMT was simulated by ATLAS, and fabricated with T-gate process. Measured performance of the PHEMT agreed well with that of simulation. S₂₁ of 3.6 dB was measured at 35 GHz with f_T over 45 GHz, and f_max over 100 GHz. The PHEMT was also analyzed at 35 GHz for the variations in MAG according to gate and drain biases, and also for the changes in MAG and the output power against the unit gate width and the number of gate fingers

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; circuit simulation; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit measurement; millimetre wave field effect transistors; power HEMT; 35 GHz; ATLAS; AlGaAs-InGaAs-GaAs; MAG; MMIC applications; T-gate process; drain biases; gate biases; gate fingers; output power; performance measurement; power PHEMT; simulation; unit gate width; Etching; Fabrication; Fingers; Gallium arsenide; Indium gallium arsenide; PHEMTs; Power engineering and energy; Power generation; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 99. Proceedings of the IEEE Region 10 Conference

Conference_Location

Cheju Island

Print_ISBN

0-7803-5739-6

Type

conf

DOI

10.1109/TENCON.1999.818620

Filename

818620