Title :
Simulation and fabrication of AlGaAs/InGaAs/GaAs power PHEMT for MMIC applications at 35 GHz
Author :
Lee, Seong Dae ; Heo, Jong Gon ; Yang, Seong Hwan ; Rhee, Jin Koo
Author_Institution :
Dept. of Electron. Eng., Dongguk Univ., Seoul, South Korea
Abstract :
In this paper, AlGaAs/InGaAs/GaAs power PHEMT was simulated by ATLAS, and fabricated with T-gate process. Measured performance of the PHEMT agreed well with that of simulation. S21 of 3.6 dB was measured at 35 GHz with fT over 45 GHz, and fmax over 100 GHz. The PHEMT was also analyzed at 35 GHz for the variations in MAG according to gate and drain biases, and also for the changes in MAG and the output power against the unit gate width and the number of gate fingers
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; circuit simulation; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit measurement; millimetre wave field effect transistors; power HEMT; 35 GHz; ATLAS; AlGaAs-InGaAs-GaAs; MAG; MMIC applications; T-gate process; drain biases; gate biases; gate fingers; output power; performance measurement; power PHEMT; simulation; unit gate width; Etching; Fabrication; Fingers; Gallium arsenide; Indium gallium arsenide; PHEMTs; Power engineering and energy; Power generation; Radio frequency; Voltage;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818620
