DocumentCode :
3504495
Title :
Nano-SiC film applicated on solar cells
Author :
Wang, Erlei ; Zhang, Xiuxia ; Yang, Xiaocong ; Zhang, Lixia ; Wei, Shuyi
Author_Institution :
Sch. of Electron. & Inf. Eng., North Nat. Univ., China
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
Nano-SiC film optics gap has great effects on the improvement of amorphous silicon solar cells. The quality of Nano-SiC film directly affects the open circuit voltage of solar cells and short circuit current. In this paper, sol-gel method was adopted to fabricated SiC film. The thermal sintering process of Nano-SiC film was studied, the SiC films were micro-analyzed by SEM and the I-V characteristics of solar cells with different SiC layers were tested.
Keywords :
amorphous semiconductors; nanotechnology; scanning electron microscopy; short-circuit currents; silicon compounds; sintering; sol-gel processing; solar cells; wide band gap semiconductors; I-V characteristics; SEM; SiC; amorphous silicon solar cells; nanofilm optics gap; open circuit voltage; short circuit current; sol-gel method; thermal sintering process; Amorphous silicon; Educational institutions; Films; Photovoltaic cells; Physics; Short circuit currents; I-V characteristics; nano-SiC film; open circuit voltage; short circuit current; solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316892
Filename :
6316892
Link To Document :
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