Title :
An analysis of electrical characteristics of 0.22 μm triple well CMOS device by FA and RTA processes
Author :
Jang, Joon-Tae ; Kang, Hyo-Young ; Kim, Joong-Yean ; Um, Gum-Yong ; Oh, Hwan-Sool
Author_Institution :
Dept. of Electron. Eng., Kon-Kuk Univ., Seoul, South Korea
Abstract :
We fabricated 0.22 μm triple well CMOS with deep p-well, doped with 1×1014 B ions/cm2, implanting with energy of 1.7 MeV by using high energy ion implantation equipment and thermal processes at 950°C, 30 min by FA and at 1100°C, 30 sec by RTA. The electrical characteristics which were compared and analyzed for each thermal treatment are junction leakage current and junction breakdown voltage and sub-threshold current- and latch-up immunity. We propose that RTA is superior to FA in thermal process from the viewpoint of electrical characteristics. We obtained excellent leakage currents and junction breakdown voltage characteristics by RTA process
Keywords :
CMOS integrated circuits; annealing; integrated circuit reliability; ion implantation; leakage currents; rapid thermal annealing; semiconductor device breakdown; 0.22 micron; 1.7 MeV; 1100 degC; 30 min; 30 s; 950 degC; RTA processes; Si:B; deep p-well; electrical characteristics; furnace annealing; high energy ion implantation equipment; junction breakdown voltage; junction leakage current; latch-up immunity; sub-threshold current; triple well CMOS device; Annealing; Breakdown voltage; CMOS process; Electric variables; Electric variables measurement; Leakage current; Length measurement; MOSFET circuits; Silicon; Threshold voltage;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818621
