An analysis of electrical characteristics of 0.22 μm triple well CMOS device by FA and RTA processes

Author

Jang, Joon-Tae ; Kang, Hyo-Young ; Kim, Joong-Yean ; Um, Gum-Yong ; Oh, Hwan-Sool

Author_Institution

Dept. of Electron. Eng., Kon-Kuk Univ., Seoul, South Korea

Volume

2

fYear

1999

fDate

36495

Firstpage

1121

Abstract

We fabricated 0.22 μm triple well CMOS with deep p-well, doped with 1×10¹⁴ B ions/cm², implanting with energy of 1.7 MeV by using high energy ion implantation equipment and thermal processes at 950°C, 30 min by FA and at 1100°C, 30 sec by RTA. The electrical characteristics which were compared and analyzed for each thermal treatment are junction leakage current and junction breakdown voltage and sub-threshold current- and latch-up immunity. We propose that RTA is superior to FA in thermal process from the viewpoint of electrical characteristics. We obtained excellent leakage currents and junction breakdown voltage characteristics by RTA process

Keywords

CMOS integrated circuits; annealing; integrated circuit reliability; ion implantation; leakage currents; rapid thermal annealing; semiconductor device breakdown; 0.22 micron; 1.7 MeV; 1100 degC; 30 min; 30 s; 950 degC; RTA processes; Si:B; deep p-well; electrical characteristics; furnace annealing; high energy ion implantation equipment; junction breakdown voltage; junction leakage current; latch-up immunity; sub-threshold current; triple well CMOS device; Annealing; Breakdown voltage; CMOS process; Electric variables; Electric variables measurement; Leakage current; Length measurement; MOSFET circuits; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 99. Proceedings of the IEEE Region 10 Conference

Conference_Location

Cheju Island

Print_ISBN

0-7803-5739-6

Type

conf

DOI

10.1109/TENCON.1999.818621

Filename

818621