Title :
Silicon bipolar transistor design and modeling for microwave integrated circuit applications
Author :
Larson, Lawrence E.
Author_Institution :
Dept. of Head-Telecommun. Technol., Hughes Res. Labs., Malibu, CA, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
This paper summarizes the recent progress in the fabrication, design, and modeling of silicon and Si/SiGe bipolar transistors for high-frequency microwave integrated circuit applications. These devices are now capable of performance levels that were only achievable with GaAs technology just a few years ago. The specific device requirements for low-noise signal and power amplifiers are discussed, as well as required improvements in device modeling for these applications
Keywords :
Ge-Si alloys; bipolar MMIC; elemental semiconductors; integrated circuit modelling; microwave amplifiers; semiconductor device models; semiconductor materials; silicon; Si-SiGe; bipolar transistors; device modeling; device requirements; low-noise amplifiers; microwave integrated circuit applications; performance levels; power amplifiers; signal amplifiers; Application specific integrated circuits; Bipolar integrated circuits; Bipolar transistors; Fabrication; Gallium arsenide; Germanium silicon alloys; Integrated circuit modeling; Microwave devices; Microwave integrated circuits; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554633
