Title :
Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices
Author :
Khosru, Quazi Deen Mohd ; Uddin, Md.Nasir ; Khan, M. Rezwan
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
A new approach of applying transmission line techniques is introduced to study the time evolution of electron wavefunction localized in a trap quantum well in the oxide of MOS devices. Considering it as a one-dimensional problem and using the effective similarity with the energy band profile of a double-barrier quantum well, a model is developed to calculate the relaxation time of a trapped charge under flat band conditions. It is then used to calculate the effective relaxation time under externally applied electric fields. Results thus obtained are in reasonable agreement with the reported experimental observations
Keywords :
MIS devices; carrier relaxation time; electron traps; semiconductor device reliability; semiconductor quantum wells; double-barrier quantum well; effective relaxation time; effective similarity; electron wavefunction; energy band profile; externally applied electric fields; flat band conditions; metal-oxide-semiconductor devices; one-dimensional problem; time evolution; transmission line techniques; trap quantum well; trapped charge relaxation characteristics; Acceleration; Degradation; Electron traps; Interface states; MOS devices; Physics; Quantum mechanics; Resonant tunneling devices; Threshold voltage; Transmission line theory;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818624
