Title :
The characteristics of wet gate oxide device and nitride oxide (NO) device
Author :
Jae-Young, Yi ; Yong-Hui, Lee ; Laszlo, Szirmay-Kalos ; Cheon-Hee, Yi
Author_Institution :
Dept. of Control Eng. & Inf., Tech. Univ. Budapest, Hungary
Abstract :
In this paper we fabricated and tested the 0.26 μm NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC (stress induced leakage current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device are better than wet gate oxide device, especially hot carrier lifetime (nitride oxide gate device has a lifetime of 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown and charge trapping
Keywords :
MOSFET; carrier lifetime; characteristics measurement; electron traps; hot carriers; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; 0.26 micron; HP4145 device tester; NMOSFET; SILC; carrier lifetime; charge to breakdown; charge trapping; hot carrier effect; nitride oxide device; stress induced leakage current; wet gate oxide device; Degradation; Electric breakdown; Electron traps; Electronic equipment testing; Hot carrier effects; Hot carriers; Life testing; MOSFET circuits; Oxidation; Voltage;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818625
