• DocumentCode
    3504679
  • Title

    Intermixing and surface alloying in Hf and Zr ad-layers on W(100)

  • Author

    Ciszewski, A. ; Trembulowicz, A. ; Jurczyszyn, L. ; Szczudlo, Z.

  • Author_Institution
    Inst. of Exp. Phys., Univ. of Wroclaw, Wroclaw, Poland
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Hafnium or zirconium layers of thickness from a fraction of geometrical monolayer up to 2 monolayers were vapor-deposited under ultra high vacuum on the surface of the (100)-oriented W single crystal and gradually annealed at various temperatures from 300 to 2100 K. Intermixing, interdiffusion, and alloying of Hf or Zr adlayers on W(100) were observed and studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Two surface alloys of different stoichometry have been identified for both Hf/W(100) and Zr/W(100) adsorption systems. Influence of oxygen adsorption on topography and morphology of Zr adlayers deposited on stepped W(100) surface was studied by STM. Formation of islands of Zr3W surface alloy surrounded by bunched steps was observed in this case.
  • Keywords
    Auger electron spectra; adsorption; annealing; chemical interdiffusion; electron field emission; hafnium alloys; low energy electron diffraction; mixing; scanning tunnelling microscopy; stoichiometry; surface alloying; tungsten alloys; vacuum deposition; zirconium alloys; AES; Auger electron spectroscopy; Hf; LEED; STM; W; Zr; Zr3W; ad-layer morphology; field emission; geometrical monolayer fraction; hafnium layers; interdiffusion; intermixing; low energy electron diffraction; oxygen adsorption; scanning tunneling microscopy; single crystal; stoichometry; surface alloying; temperature 300 K to 2100 K; ultrahigh vacuum deposition; vapor-deposition; zirconium layers; Annealing; Hafnium; Surface topography; Zirconium; Schottky emitters; field emission; surface alloys;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316900
  • Filename
    6316900