DocumentCode
3504679
Title
Intermixing and surface alloying in Hf and Zr ad-layers on W(100)
Author
Ciszewski, A. ; Trembulowicz, A. ; Jurczyszyn, L. ; Szczudlo, Z.
Author_Institution
Inst. of Exp. Phys., Univ. of Wroclaw, Wroclaw, Poland
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
2
Abstract
Hafnium or zirconium layers of thickness from a fraction of geometrical monolayer up to 2 monolayers were vapor-deposited under ultra high vacuum on the surface of the (100)-oriented W single crystal and gradually annealed at various temperatures from 300 to 2100 K. Intermixing, interdiffusion, and alloying of Hf or Zr adlayers on W(100) were observed and studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Two surface alloys of different stoichometry have been identified for both Hf/W(100) and Zr/W(100) adsorption systems. Influence of oxygen adsorption on topography and morphology of Zr adlayers deposited on stepped W(100) surface was studied by STM. Formation of islands of Zr3W surface alloy surrounded by bunched steps was observed in this case.
Keywords
Auger electron spectra; adsorption; annealing; chemical interdiffusion; electron field emission; hafnium alloys; low energy electron diffraction; mixing; scanning tunnelling microscopy; stoichiometry; surface alloying; tungsten alloys; vacuum deposition; zirconium alloys; AES; Auger electron spectroscopy; Hf; LEED; STM; W; Zr; Zr3W; ad-layer morphology; field emission; geometrical monolayer fraction; hafnium layers; interdiffusion; intermixing; low energy electron diffraction; oxygen adsorption; scanning tunneling microscopy; single crystal; stoichometry; surface alloying; temperature 300 K to 2100 K; ultrahigh vacuum deposition; vapor-deposition; zirconium layers; Annealing; Hafnium; Surface topography; Zirconium; Schottky emitters; field emission; surface alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location
Jeju
ISSN
pending
Print_ISBN
978-1-4673-1983-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IVNC.2012.6316900
Filename
6316900
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