Title :
Ultimate low threshold and high efficiency calculated for GaInAsP microdisk injection lasers with optimum posts
Author :
Fujita, M. ; Sakai, A. ; Ohsaki, D. ; Baba, T.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Recently, we have demonstrated the room temperature CW operation in a GaInAsP microdisk laser with a record low threshold of 150 /spl mu/A and the smallest disk diameter of 2 /spl mu/m. We expect to further improve the performance to make this device a fundamental active element in a functional photonic circuit. However, the ultimate performance has never been discussed. In the study, we investigated the lowest threshold and the highest internal differential quantum efficiency expected in a realistic device.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; microdisc lasers; quantum well lasers; 150 muA; 2 mum; GaInAsP; GaInAsP microdisk injection lasers; disk diameter; functional photonic circuit; fundamental active element; internal differential quantum efficiency; laser efficiency; laser performance; laser threshold; optimum posts; realistic device; room temperature CW operation; ultimate performance; Charge carrier density; Circuits; Optical losses; Optical scattering; Particle scattering; Performance loss; Quantum well devices; Stimulated emission; Temperature; Thermal resistance;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.817747
