DocumentCode
3504804
Title
Spindt-type FEA fabrication by high-power impluse magnetron sputtering (HiPIMS)
Author
Yoshida, Tomoya ; Nagao, Masayoshi ; Koda, Nobuko ; Nishi, Takashi ; Ohsaki, Hisashi ; Nakano, Takeo
Author_Institution
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
2
Abstract
We propose Spindt-type field emitter array fabrication process using the high power impulse magnetron sputtering (HiPIMS) deposition. HiPIMS method can get a lot of ionized sputtering particles due to high plasma density. We think that highly collimated film deposition may be realized by combining the potential control of the sputtering target and HiPIMS method. We tried that molybdenum deposition in a gatehole structure using potential-controlled HiPIMS method. And, we demonstrated that the possibility of the FEA fabrication process using this method.
Keywords
field emitter arrays; molybdenum; plasma density; sputter deposition; HiPIMS deposition method; Mo; Spindt-type FEA fabrication process; Spindt-type field emitter array fabrication process; gate hole structure; high plasma density; high-power impulse magnetron sputtering deposition; highly collimated film deposition; ionized sputtering particles; molybdenum deposition; potential-controlled HiPIMS method; Cathodes; Electric potential; Fabrication; Logic gates; Plasmas; Shape; Sputtering; Spindt-tyepe FEA; high power impulse magnetron sputtering (HiPIMS);
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location
Jeju
ISSN
pending
Print_ISBN
978-1-4673-1983-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IVNC.2012.6316908
Filename
6316908
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