• DocumentCode
    3504804
  • Title

    Spindt-type FEA fabrication by high-power impluse magnetron sputtering (HiPIMS)

  • Author

    Yoshida, Tomoya ; Nagao, Masayoshi ; Koda, Nobuko ; Nishi, Takashi ; Ohsaki, Hisashi ; Nakano, Takeo

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose Spindt-type field emitter array fabrication process using the high power impulse magnetron sputtering (HiPIMS) deposition. HiPIMS method can get a lot of ionized sputtering particles due to high plasma density. We think that highly collimated film deposition may be realized by combining the potential control of the sputtering target and HiPIMS method. We tried that molybdenum deposition in a gatehole structure using potential-controlled HiPIMS method. And, we demonstrated that the possibility of the FEA fabrication process using this method.
  • Keywords
    field emitter arrays; molybdenum; plasma density; sputter deposition; HiPIMS deposition method; Mo; Spindt-type FEA fabrication process; Spindt-type field emitter array fabrication process; gate hole structure; high plasma density; high-power impulse magnetron sputtering deposition; highly collimated film deposition; ionized sputtering particles; molybdenum deposition; potential-controlled HiPIMS method; Cathodes; Electric potential; Fabrication; Logic gates; Plasmas; Shape; Sputtering; Spindt-tyepe FEA; high power impulse magnetron sputtering (HiPIMS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316908
  • Filename
    6316908