DocumentCode :
3504804
Title :
Spindt-type FEA fabrication by high-power impluse magnetron sputtering (HiPIMS)
Author :
Yoshida, Tomoya ; Nagao, Masayoshi ; Koda, Nobuko ; Nishi, Takashi ; Ohsaki, Hisashi ; Nakano, Takeo
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
We propose Spindt-type field emitter array fabrication process using the high power impulse magnetron sputtering (HiPIMS) deposition. HiPIMS method can get a lot of ionized sputtering particles due to high plasma density. We think that highly collimated film deposition may be realized by combining the potential control of the sputtering target and HiPIMS method. We tried that molybdenum deposition in a gatehole structure using potential-controlled HiPIMS method. And, we demonstrated that the possibility of the FEA fabrication process using this method.
Keywords :
field emitter arrays; molybdenum; plasma density; sputter deposition; HiPIMS deposition method; Mo; Spindt-type FEA fabrication process; Spindt-type field emitter array fabrication process; gate hole structure; high plasma density; high-power impulse magnetron sputtering deposition; highly collimated film deposition; ionized sputtering particles; molybdenum deposition; potential-controlled HiPIMS method; Cathodes; Electric potential; Fabrication; Logic gates; Plasmas; Shape; Sputtering; Spindt-tyepe FEA; high power impulse magnetron sputtering (HiPIMS);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316908
Filename :
6316908
Link To Document :
بازگشت