Vertical bent thin-film FEA

We have proposed field-emitter-array fabrication process based on thin-film processes, to fabricate FEA having high compatibility with metal-oxide semiconductor field-effect-transistor and thin film transistor processes. This proposed process was realized using ion-induced bending technique, which can bend thin-film cantilevers to form high aspect ratio structure array. The field electron emission of more than 1 A/cm3 was obtained from our fabricated FEA.