DocumentCode :
3504888
Title :
Transparent light-emitting diodes using InP based alloy-cored multishell quantum dots
Author :
Kim, Yohan ; Kim, Se Min ; Greco, Tonino ; Ippen, Christine ; Wedel, Armin ; Kang, Jungwon ; Kim, Yong-Hoon ; Oh, Min Suk ; Han, Chul Jong ; Kim, Jiwan
Author_Institution :
Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) with high quantum yield were prepared by convenient heating-up method for a light emission layer of transparent QD light-emitting diodes (QD-LEDs). The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent quantum yield (QY) of 40 %. Using a Ca/Ag cathode, the whole QD-LED device was semi-transparent and the maximum luminance and current efficiency reach 400 cd/m2, 0.80 cd/A.
Keywords :
III-V semiconductors; calcium; cathodes; colloids; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum dots; silver; zinc compounds; Ca-Ag; InP-ZnSe-ZnS; QD-LED; QD-LED device; alloy-cored multishell quantum dots; cathode; heating-up method; light emission layer; muitishell colloidal quantum dots; photoluminescent quantum yield; size 50 nm; transparent QD light-emitting diodes; Cathodes; Heating; Indium phosphide; Light emitting diodes; Performance evaluation; Quantum dots; cadmium free; colloidal quantum dots; multishell; transparent QD-LEDs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316911
Filename :
6316911
Link To Document :
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