Vertically aligned graphene sheets grown on carbon nanotubes

Author

Liu, Jianlong ; Zeng, Baoqing

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

Vertically aligned graphene sheets were grown on carbon nanotubes by microwave-plasma enhanced chemical vapor deposition. Due to their high multistage enhancement and intrinsic low contact resistance, these graphene sheets resulted in good emission property. It was found that the turn-on field was 1.4V/μm, and the threshold-field corresponding to emission current density of 1mA/cm² was about 2.9V/μm. The high enhancement factor was attributed to the effects of the high aspect ratio of graphene sheets and the geometry of carbon nanotubes.

Keywords

carbon nanotubes; current density; electron field emission; graphene; plasma CVD; sheet materials; C; carbon nanotubes; emission current density; field emission; high aspect ratio; high enhancement factor; intrinsic low contact resistance; microwave-plasma enhanced chemical vapor deposition; multistage enhancement; threshold-field; turn-on field; vertically aligned graphene sheets; Carbon; Carbon nanotubes; Chemical vapor deposition; Chemicals; Current density; Substrates; carbon nanotube; field emisison; graphene;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316914

Filename

6316914