• DocumentCode
    3504994
  • Title

    Zinc oxide nano-chrysanthemum as field-emission cathode synthesized on n-doped silicon microstructures

  • Author

    Wang, Lanlan ; Liu, Hongzhong ; Chen, Bangdao ; Ding, Yuchen ; Li, Xin ; Liu, Weihua

  • Author_Institution
    Sch. of Mech. Eng., Xi´´an Jiaotong Univ., Xi´´an, China
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Summary form only given. ZnO Nano-chrysanthemum arrays are both synthesized on silicon nano-needles and in silicon micro-holes with hydrothermal method. A ZnO Nano-chrysanthemum is a bunch of ZnO nanorods reaches out from one root. The influence of the reaction time has been carefully discussed and the Van der Waals force is regarded as the driving force from one needle to one Nano-chrysanthemum. This configuration helps suppressing the field screen-effect at a relatively high emission tip density. The influence of the reaction time and the concentration of hydrothermal solution on morphology have been carefully discussed. Turn-on fields as low as 3.35 V/μm and 5.25V/μm from ZnO nano-chrysanthemum on silicon nano-needles and in silicon micro-holes are reported, respectively. A field enhancement factor of 5523 is estimated for ZnO nano-chrysanthemum on silicon nano-needles.
  • Keywords
    II-VI semiconductors; cathodes; electron field emission; elemental semiconductors; nanorods; silicon; wide band gap semiconductors; zinc compounds; Van der Waals force; ZnO-Si; field screen-effect suppression; field-emission cathode; high emission tip density; hydrothermal method; hydrothermal solution concentration; microhole; microstructure; nanochrysanthemum array; nanoneedle; nanorod; reaction time influence; Cathodes; Educational institutions; Force; Microelectronics; Microstructure; Silicon; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316917
  • Filename
    6316917