Title :
Specific features of field emission from an Al0.3Ga0.7N/GaN system
Author :
Semenenko, M. ; Yilmazoglu, O.
Author_Institution :
Lab. of Non-Conventional & Renewable Energy Sources, V. Ye. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The electron field emission properties from a photoelectrochemically etched AlGaN/GaN heterostructure grown by MOCVD was investigated. Reproducible peaks were obtained in the field emission characteristics. The origin of these peaks was explained by the proposed model of resonant tunneling of electrons. The widths of the wells and barriers have been estimated by simulating the spectra of the energy distribution of field emission electrons by the transfer-matrix technique and are 8 nm and 3 nm, respectively.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; electron field emission; etching; gallium compounds; matrix algebra; photoelectrochemistry; resonant tunnelling; semiconductor growth; wide band gap semiconductors; Al0.3Ga0.7N-GaN; MOCVD; electron field emission property; electron resonant tunneling model; energy distribution; field emission characteristics; photoelectrochemically etched heterostructure; size 3 nm; size 8 nm; transfer-matrix technique; Aluminum gallium nitride; Etching; Gallium nitride; Iron; Nanoparticles; Resonant tunneling devices; GaN; field emission; resonant tunneling system;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316919
