DocumentCode :
3505025
Title :
Fabrication of antiguide array lasers using a modulated-cap thin p-clad structure
Author :
O, J.S. ; Zory, P.S.
Author_Institution :
Electr. & Comput. Eng. Dept., Florida Univ., Gainesville, FL, USA
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
36
Lastpage :
37
Abstract :
Summary form only given. Because the required refractive-index variations can be achieved by precise etching of the cap layer in thin p-clad structures, we believe it may be possible to achieve in-phase operation of AlGaAs lasers routinely using the MCTC structure. In this work, the precise etching required to fabricate AlGaAs lasers was accomplished using a pulsed anodization/etching technique.
Keywords :
III-V semiconductors; aluminium compounds; anodisation; etching; gallium arsenide; optical fabrication; quantum well lasers; semiconductor laser arrays; AlGaAs; AlGaAs lasers; MCTC structure; antiguide array lasers; cap layer; etching technique; in-phase operation; modulated-cap thin p-clad structures; precise etching; pulsed anodization; refractive-index variations; semiconductor laser fabrication; thin p-clad structures; Etching; Laser beams; Laser modes; Optical arrays; Optical device fabrication; Optical refraction; Phased arrays; Power lasers; Surface emitting lasers; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.675828
Filename :
675828
Link To Document :
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