Title :
Fabrication of narrow far-field InGaAs-InAlGaAs broad-area lasers using quantum well intermixed extended cavities
Author :
Kowalski, O.P. ; Hamilton, C.J. ; McDougall, S.D. ; Vogele, B. ; Marsh, J.H. ; Bryce, A.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Summary form only given. We report the first demonstration of InGaAs-InAlGaAs extended cavity lasers, using a new quantum well intermixing (QWI) process. The technique involves the deposition of a layer of sputtered SiO/sub 2/ on the semiconductor surface, followed by a high temperature anneal. The deposition process generates point defects at the sample surface by ion bombardment, which, during the anneal stage, diffuse into the active region, significantly enhancing the interdiffusion of well and barrier atoms.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; sputter deposition; InGaAs-InAlGaAs; InGaAs-InAlGaAs broad-area lasers; SiO/sub 2/; active region; anneal stage; barrier atom; deposition process; interdiffusion; ion bombardment; laser cavity resonators; narrow far-field; point defects; quantum well intermixed extended cavities; quantum well intermixing process; quantum well lasers; sample surface; semiconductor surface; sputter deposition; sputtered SiO/sub 2/; Diffraction; Etching; Gallium arsenide; Gold; Lasers and Electro-Optics Society; Optical arrays; Optical device fabrication; Optical refraction; Quantum well lasers; Refractive index;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675829
