Narrow spectral width (<1 /spl Aring/ FWHM) 1.1-W cw operation from 100-/spl mu/m stripe DFB diode lasers (/spl lambda/=0.893 /spl mu/m) with Al-free optical-confinement region

Author

Earles, T. ; Mawst, L.J. ; Botez, D.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

38

Lastpage

39

Abstract

Summary form only given. We present results from 100-/spl mu/m stripe DFB lasers, which operate at 1.1 W cw with a linewidth of 0.9 W and at 1 W quasi-cw (5 /spl mu/s, 2 kHz) with a linewidth of 1.2 A. These SCH lasers use a broad-waveguide structure consisting of an InGaAs DQW active region within an InGaP optical confinement region and InGaAlP cladding layers.

Keywords

III-V semiconductors; claddings; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; spectral line breadth; waveguide lasers; 0.893 mum; 1.1 W; 100 mum; 5 mus; Al-free optical-confinement region; DFB diode lasers; InGaAlP; InGaAlP cladding layers; InGaAs; InGaAs DQW active region; InGaP; InGaP optical confinement region; SCH lasers; broad-waveguide structure; cw operation; linewidth; narrow spectral width; quasi-cw; Annealing; Chemical lasers; Diode lasers; Laser modes; Optical materials; Photonic band gap; Plasma measurements; Plasma temperature; Power lasers; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675830

Filename

675830