DocumentCode :
3505144
Title :
Single-crystal LaB6 tip as electron source for high-throughput electron beam lithography
Author :
Rokuta, Eiji ; Murata, Hidekazu ; Shimoyama, Hiroshi ; Yasuda, Hiroshi ; Haraguchi, Takeshi
Author_Institution :
Fac. of Sci. & Eng., Meijo Univ., Nagoya, Japan
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
Thermal field emission (TFE) characteristics of single-crystal LaB6 columnar tip were investigated. After adequate cleaning treatment, TFE was continuously stable at 1600 K and 1700 K in 10-8 Pa. Emission patterns indicated that TFE could be regarded as uniform if we took it into account that the size of the emission region practically used for the e-beam lithography was about 0.5 mm on the fluorescence screen.
Keywords :
cleaning; electron beam lithography; electron sources; field emission; lanthanum compounds; LaB6; TFE characteristic; cleaning treatment; electron source; emission pattern; fluorescence screen; high-throughput electron beam lithography; single- crystal columnar tip; temperature 1600 K; temperature 1700 K; thermal field emission characteristic; Cathodes; Electron emission; Electron sources; Lithography; Logic gates; Surface morphology; Thermal stability; Electron Beam Lithography; Lanthanum hexaboraides; field-thermal emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316925
Filename :
6316925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3505144
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