Title :
Vacuum field emission integrated differential amplifier
Author :
Hsu, S.H. ; Kang, W.P. ; Raina, S. ; Davidson, J.L. ; Huang, J.H. ; Kerns, D.V.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
This paper reports the development of an integrated vacuum field emission transistor differential amplifier (diff-amp) utilizing nanodiamond emitters. The device was fabricated by a dual-mask self-aligned mold transfer technique using standard silicon microfabrication technique in conjunction with chemical vapor deposited nanodiamond. The emission current of the transistor pair was validated by the Fowler-Nordheim equation. Well-matched field emission transistor characteristics and large common-mode rejection ratio of 55 dB were obtained, suggesting the capability of the device to reject common-mode noises and to amplify the information contained in differential signals.
Keywords :
chemical vapour deposition; diamond; differential amplifiers; field emission; masks; microfabrication; nanofabrication; transfer moulding; transistors; C; Fowler-Nordheim equation; chemical vapor deposited nanodiamond emitter; common-mode noise rejection ratio; differential signal; dual-mask self-aligned mold transfer technique; emission current transistor pair; field emission transistor characteristic; gain 55 dB; integrated vacuum field emission transistor differential amplifier; standard silicon microfabrication technique; Current measurement; Differential amplifiers; Electrodes; Fabrication; Logic gates; Transistors; Voltage measurement; differential amplifier; integrated circuits; nanodiamond emitter; vacuum field emission;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316927