DocumentCode :
3505237
Title :
Near THz radiation from optically-induced plasma sources
Author :
Zutavern, Fred J. ; Rudd, J.V. ; Mcpherson, L.A. ; Nelson, T.R. ; Luk, T.S. ; Cameron, S.M.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2004
fDate :
1-1 July 2004
Firstpage :
261
Abstract :
Summary form only given. Short pulse lasers can be used to generate two types of short-lived, radiating plasmas. When absorbed by a semiconductor, a sudden optical pulse creates a charge-neutral, electron-hole plasma that radiates as the carriers relax in local crystal, surface, or applied electric fields. When focused onto the surface of an insulator or metal, the electric fields in an intense optical pulse break down the solid surface and surrounding gas. The charged particles in this surface-breakdown plasma radiate as they are created at the solid-gas (air) interface. The sudden creation of either of these types of plasmas with a sub-picosecond optical pulse produces a non-equilibrium distribution of charges that radiates with an extremely wide bandwidth in the THz regime. This paper reports the radiated electric field intensities, spectra, and associated radiation patterns for electron-hole plasmas from gallium arsenide and silicon, and for surface-breakdown plasmas from aluminum, glass (BK-7), gallium arsenide, and silicon. The plasmas are created and diagnosed with a chirped-pulse regenerative amplifier laser that produces a 1 kHz train of 120 fs wide pulses with up to 2 mJ of energy per pulse at a wavelength of 800 nm. To explore the wide bandwidth of these plasma radiation sources, two electric field diagnostics were used. A conventional electric field probe (D-dot) with a 40 GHz bandwidth and a 70 GHz sampling oscilloscope measured the low frequency tail of the radiation spectrum. To measure the high frequency range of the spectrum, electro-optic crystals (zinc telluride) sampled the radiated electric field as it co-propagated with an optical probe beam that was split off the excitation (pump) beam. The bandwidth of the electro-optic sampling is limited by the thickness of the electro-optic crystals, so a range of thicknesses was employed to demonstrate source-limited measurements. The fundamental differences between electron-hole and surface-breakdown pl- smas will be discussed. Similarities and contrasts in radiation patterns and efficiencies will be described for all of these plasma radiation sources. Simple models for the picosecond carrier motion in these sources will be presented and compared with measurements. The advantages and challenges of using a kilohertz, millijoule, short-pulse laser for plasma generation and electro-optic sampling will also be mentioned.
Keywords :
III-V semiconductors; aluminium; electric breakdown; electro-optical effects; elemental semiconductors; gallium arsenide; glass; high-frequency effects; plasma probes; plasma production by laser; plasma sources; plasma transport processes; semiconductor plasma; silicon; 1 kHz; 120 fs; 2 mJ; 40 GHz; 70 GHz; 800 nm; Al; GaAs; Si; THz radiation; aluminum; amplifier laser; applied electric fields; carriers relaxation; charged particles; chirped pulse; conventional electric field probe; electric field copropagation; electric field diagnostics; electric field intensity; electric field radiation; electric field spectra; electro-optic crystals; electron-hole plasma; electron-hole plasmas; excitation beam; excitation pump; gallium arsenide; glass; insulator surface; nonequilibrium distribution; optical probe beam; optically induced plasma sources; oscilloscope; picosecond carrier motion; plasma diagnostics; plasma generation; plasma radiation sources; radiating plasmas; radiation; radiation spectrum; semiconductor absorption; short pulse lasers; silicon; solid surface; solid-gas interface; source-limited measurements; subpicosecond optical pulse; surface breakdown plasma radiation; zinc telluride; Bandwidth; Optical pulse generation; Optical pulses; Optical surface waves; Plasma diagnostics; Plasma measurements; Plasma sources; Plasma waves; Pulse amplifiers; Sampling methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on
Conference_Location :
Baltimore, MD, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-8334-6
Type :
conf
DOI :
10.1109/PLASMA.2004.1339897
Filename :
1339897
Link To Document :
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