Title :
Raman emission in porous silicon at 1.5 micron: a possible approach
Author :
Sirleto, L. ; Ferrara, M.A. ; Moretti, L. ; Rendina, I. ; Rossi, A. ; Santamato, E. ; Jalali, B.
Author_Institution :
Istituto per la Microelettronica e Microsistemi, CNR, Napoli, Italy
Abstract :
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported. Finally, we discuss about the possibility to enhance the Raman gain coefficient and to eliminate two photon absorption in porous silicon.
Keywords :
elemental semiconductors; optical materials; optical tuning; porous semiconductors; silicon; spontaneous emission; stimulated Raman scattering; 1.5 micron; Raman emission; Raman gain coefficient; Raman scattering; Si; Stokes shift tuning; porous silicon; spontaneous emission; two photon absorption elimination; Brillouin scattering; Light scattering; Optical scattering; Particle scattering; Phonons; Photonic crystals; Raman scattering; Silicon; Stimulated emission; Waveguide junctions;
Conference_Titel :
Fibres and Optical Passive Components, 2005. Proceedings of 2005 IEEE/LEOS Workshop on
Print_ISBN :
0-7803-8949-2
DOI :
10.1109/WFOPC.2005.1462108
