Title :
Investigation of charge state of field-ionized noble gases by time-of-flight mass spectrometry
Author :
Iwata, Tatsuo ; Okawa, Ryuta ; Nagai, Shigekazu ; Kajiwara, Kazuo ; Hata, Koich
Author_Institution :
Grad. Sch. of Eng., Mie Univ., Mie, Japan
Abstract :
Charge state distributions of Ar and Ne Gas Field Ion Source (GFIS) were investigated by time-of-flight mass spectrometry using a newly designed experimental system. GIFS emitter having few atoms on the top of a (111) surface of tungsten were formed by remolding and field evaporation sequence with electrochemically etched <;111>; oriented tip. At the probe current of about lpA, the ratio of standard deviation of fluctuation and average ion current <; 2.5% was recorded from a single atom terminated emitter Ar-GFIS. Mass analysis by time-of-flight spectrometer showed that there were only singly charged ions both of Ne- and Ar-GFIS. Furthermore, no impurity gas was detected in the mass spectrum. These findings look promising for the development of both Ne and Ar GFIS systems.
Keywords :
argon; electrochemical analysis; etching; field evaporation; field ionisation; gas sensors; ion sources; moulding; neon; time of flight mass spectra; Ar; GIFS emitter; Ne; average ion current recording; charge state distribution investigation; electrochemically etched oriented tip; field evaporation sequence; field-ionized noble gas detection; gas field ion source emitter; mass spectrum analysis; probe current; remolding formation; single atom terminated emitter; time-of-flight mass spectrometry; Argon; Atomic measurements; Ion beams; Microscopy; Nitrogen; Tungsten; Charge State; GFIS; Time of flight;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316941