DocumentCode :
3505478
Title :
Mathematical calculations concerning the electron transit time for the planar parallel VME diode
Author :
Chen, B.X. ; Xia, S.H. ; Liu, G.Y. ; Li, H.Y.
Author_Institution :
Electron. Co. Ltd., Wuxi, China
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
We have analyzed the influence of space charge on potential distribution for a planar parallel vacuum microelectronics diode by using of the Posson equation, derived the relationships of electron transit time under considering and neglecting the influence of space charge from the basic definition of electron transit time. Some relative application of those relationship also were provided as instances.
Keywords :
Poisson equation; semiconductor diodes; space charge; vacuum microelectronics; Poisson equation; electron transit time; mathematical calculations; planar parallel VME diode; planar parallel vacuum microelectronic diode; space charge; Anodes; Cathodes; Current density; Electric fields; Electric potential; Microelectronics; Space charge; electron trasit time; planar parallel vacuum microelectronics diode (pp-VME diode); space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316942
Filename :
6316942
Link To Document :
بازگشت