Title :
Electron beam characterization of double gate field emitter arrays fabricated by a focused ion beam assisted process
Author :
Helfenstein, Patrick ; Jefimovs, Konstantins ; Kirk, Eugenie ; Escher, Conrad ; Fink, Hans-Werner ; Tsujino, Soichiro
Author_Institution :
Lab. for Micro- & Nantoechnology, Paul Scherrer Inst., Villigen, Switzerland
Abstract :
We have recently presented double-gate field emitter arrays exhibiting an improved electron beam in terms of collimation angle and current density. Here we report a detailed analysis of the beam collimation properties of our devices and an up-scaling of the array size by a factor of one hundred.
Keywords :
collimators; current density; electron beams; field emitter arrays; focused ion beam technology; beam collimation property; collimation angle; current density; double gate field emitter arrays; electron beam characterization; focused ion beam assisted process; Apertures; Electron beams; Field emitter arrays; Laser beams; Logic gates; Plasmas; double-gate; electron beam collimation; field emission; field emtter array;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316945
