DocumentCode
3505571
Title
Electron beam characterization of double gate field emitter arrays fabricated by a focused ion beam assisted process
Author
Helfenstein, Patrick ; Jefimovs, Konstantins ; Kirk, Eugenie ; Escher, Conrad ; Fink, Hans-Werner ; Tsujino, Soichiro
Author_Institution
Lab. for Micro- & Nantoechnology, Paul Scherrer Inst., Villigen, Switzerland
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
2
Abstract
We have recently presented double-gate field emitter arrays exhibiting an improved electron beam in terms of collimation angle and current density. Here we report a detailed analysis of the beam collimation properties of our devices and an up-scaling of the array size by a factor of one hundred.
Keywords
collimators; current density; electron beams; field emitter arrays; focused ion beam technology; beam collimation property; collimation angle; current density; double gate field emitter arrays; electron beam characterization; focused ion beam assisted process; Apertures; Electron beams; Field emitter arrays; Laser beams; Logic gates; Plasmas; double-gate; electron beam collimation; field emission; field emtter array;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location
Jeju
ISSN
pending
Print_ISBN
978-1-4673-1983-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IVNC.2012.6316945
Filename
6316945
Link To Document