An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator

Author

Soyuer, Mehmet ; Burghartz, Joachim ; Ainspan, Herschel ; Jenkins, Keith ; Xiao, Peter ; Shahani, Arvin ; Dolan, Margaret ; Harame, David

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1996

fDate

29 Sep-1 Oct 1996

Firstpage

169

Lastpage

172

Abstract

A 10.5 to 11-GHz fully-monolithic voltage-controlled oscillator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of 0 to 3 V. The circuit draws less than 8 mA from a 3-V supply including the reference branch bias current

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; integrated circuit noise; microwave oscillators; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 0 to 3 V; 10.5 to 11 GHz; 8 mA; HBT; SHF; SiGe; SiGe bipolar technology; integrated resonator; monolithic VCO; onchip varactor-tuned resonator; phase noise; reference branch bias current; tuning range; voltage-controlled oscillator; Circuits; Diodes; Germanium silicon alloys; Inductors; MIM capacitors; Resistors; Silicon germanium; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3516-3

Type

conf

DOI

10.1109/BIPOL.1996.554639

Filename

554639