Title :
An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator
Author :
Soyuer, Mehmet ; Burghartz, Joachim ; Ainspan, Herschel ; Jenkins, Keith ; Xiao, Peter ; Shahani, Arvin ; Dolan, Margaret ; Harame, David
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
A 10.5 to 11-GHz fully-monolithic voltage-controlled oscillator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of 0 to 3 V. The circuit draws less than 8 mA from a 3-V supply including the reference branch bias current
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; integrated circuit noise; microwave oscillators; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 0 to 3 V; 10.5 to 11 GHz; 8 mA; HBT; SHF; SiGe; SiGe bipolar technology; integrated resonator; monolithic VCO; onchip varactor-tuned resonator; phase noise; reference branch bias current; tuning range; voltage-controlled oscillator; Circuits; Diodes; Germanium silicon alloys; Inductors; MIM capacitors; Resistors; Silicon germanium; Varactors; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554639
