Title :
Intermixing of GaAs quantum well using buried Al-oxide layer
Author :
Kyu-Sang Kim ; Kyoung-Ho Ha ; Il-Young Han ; Chang-Kyu Kim ; Yong-Hee Lee
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We report characteristics of GaAs quantum well intermixing using a buried Al-oxide layer. The band gap blue shifts about 59 meV when annealed at 950/spl deg/C for 120 seconds. The photoluminescence around the interface clearly shows anisotropic carrier diffusion to the lower energy region.
Keywords :
III-V semiconductors; annealing; buried layers; chemical interdiffusion; energy gap; gallium arsenide; photoluminescence; semiconductor quantum wells; spectral line shift; 120 sec; 950 C; AlO; GaAs; anisotropic carrier diffusion; annealing; band gap; blue shift; buried Al-oxide layer; photoluminescence; quantum well intermixing; selective interdiffusion enhancement; wet oxidized layers; Annealing; Artificial intelligence; Dielectrics; Gallium arsenide; Impurities; Photoluminescence; Photonic band gap; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.817888
