Photosensitivity effect of field emission from zinc oxide nanowires

Author

Liao, M.X. ; Deng, S.Z. ; Xu, N.S. ; Chen, Jun

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

The photosensitivity effect of field emission from zinc oxide nanowires was studied by using a fully-sealed zinc oxide nanowires cold cathode flat-panel device. A LED flat-panel white lighting sources with tunable power was used to irradiate the zinc oxide nanowires. Obvious photosensitivity effect was observed. The field emission current increases with the irradiance power. The emission current increase ratio is 4.3%~11.8% corresponding to the irradiation power of 1.0 mW/cm² ~7.0 mW/cm².

Keywords

II-VI semiconductors; LED displays; electron field emission; flat panel displays; light sources; nanowires; wide band gap semiconductors; zinc compounds; LED flat-panel white lighting sources; ZnO; field emission; field emission current; fully-sealed zinc oxide nanowire cold cathode flat-panel device; photosensitivity effect; Brightness; Cathodes; Light emitting diodes; Light sources; Nanowires; Radiation effects; Zinc oxide; field emission; photosensitivity; zinc oxide nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316961

Filename

6316961