Title :
Photosensitivity effect of field emission from zinc oxide nanowires
Author :
Liao, M.X. ; Deng, S.Z. ; Xu, N.S. ; Chen, Jun
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
The photosensitivity effect of field emission from zinc oxide nanowires was studied by using a fully-sealed zinc oxide nanowires cold cathode flat-panel device. A LED flat-panel white lighting sources with tunable power was used to irradiate the zinc oxide nanowires. Obvious photosensitivity effect was observed. The field emission current increases with the irradiance power. The emission current increase ratio is 4.3%~11.8% corresponding to the irradiation power of 1.0 mW/cm2 ~7.0 mW/cm2.
Keywords :
II-VI semiconductors; LED displays; electron field emission; flat panel displays; light sources; nanowires; wide band gap semiconductors; zinc compounds; LED flat-panel white lighting sources; ZnO; field emission; field emission current; fully-sealed zinc oxide nanowire cold cathode flat-panel device; photosensitivity effect; Brightness; Cathodes; Light emitting diodes; Light sources; Nanowires; Radiation effects; Zinc oxide; field emission; photosensitivity; zinc oxide nanowire;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316961
