Title :
Metal bonded carrier for high electron emission carbon nanotube emitters
Author :
Lee, Su Woong ; Eom, Young Ju ; Won, Hae Na ; Gang, Jung Su ; Jang, Jin ; Park, K.C.
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570 °C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.
Keywords :
aluminium; annealing; bonding processes; carbon nanotubes; cathodes; contact resistance; electron field emission; Al; Si; annealing; cathode; electron emission current; emission current stability; eutectic bonded CNT emitter; eutectic bonding; high electron emission carbon nanotube emitters; metal bonded carrier; metal bonded silicon substrate; reduced contact resistance; temperature 570 degC; time 15 min; vacuum system; Bonding; Cathodes; Contact resistance; Electron emission; Metals; Silicon; Substrates; CNT; RAP; eutectic bondong;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316962
