DocumentCode :
3505946
Title :
Lamp-heated rapid vapor-phase doping technology for 100-GHz Si bipolar transistors
Author :
Kiyota, Yukihiro ; Ohue, Eiji ; Onai, Takahiro ; Washio, Katsuyoshi ; Tanabe, Masamichi ; Inada, Taroh
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
1996
fDate :
29 Sep-1 Oct 1996
Firstpage :
173
Lastpage :
176
Abstract :
High-speed Si bipolar transistor technology that uses lamp-heated Rapid Vapor-phase Doping (RVD) for shallow base formation is demonstrated. By applying RVD to a self-aligned metal/IDP (SMI) base electrode structure, excellent characteristics, 82-GHz fT and 92-GHz fmax, were obtained simultaneously. Devices with longer emitters attained 100 GHz fT and fmax
Keywords :
bipolar transistors; elemental semiconductors; semiconductor doping; silicon; 100 GHz; Si; base electrode structure; bipolar transistors; rapid vapor-phase doping; self-aligned metal/IDP structure; shallow base formation; Bipolar transistors; Boron; Cutoff frequency; Doping; Electrodes; Germanium silicon alloys; Hydrogen; Silicon germanium; Temperature; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3516-3
Type :
conf
DOI :
10.1109/BIPOL.1996.554640
Filename :
554640
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3505946
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