Title :
InGaAs/InGaAsP MQW electroabsorption modulator integrated DFB-LD structure grown by selective area epitaxy
Author :
Kim, N.H. ; Cho, S.R. ; Lee, S.D. ; Ha, H.C. ; Bang, D.S. ; Yu, J.S. ; Oh, Y.K. ; Ma, J.S. ; Choo, A.G. ; Kim, T.I.
Author_Institution :
Photonics Lab., Meter. & Device Sector, Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
High speed and low chirp light sources are among the most essential components in long distance multigigabit optical communication systems. InGaAsP-InGaAsP electroabsorption (EA) modulator integrated DFB-LDs (EMILD) have attracted special interest because of their small size, low operating voltage and low chirp. In this paper, the optical and electrical characteristics of an InGaAs-InGaAsP MQW EMILD were studied.
Keywords :
III-V semiconductors; chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optoelectronics; optical communication equipment; optical fabrication; quantum well lasers; vapour phase epitaxial growth; InGaAs-InGaAsP MQW EMILD; InGaAs/InGaAsP MQW electroabsorption modulator; InGaAsP-InGaAsP; InGaAsP-InGaAsP electroabsorption modulator integrated DFB laser diodes; d electrical characteristics; high speed light sources; integrated DFB-LD structure; long distance multigigabit optical communication systems; low chirp; low chirp light sources; low operating voltage; optical characteristics; selective area epitaxy; small size; Bandwidth; Chirp modulation; Extinction ratio; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical modulation; Photonics; Quantum well devices; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.817896
