DocumentCode :
3505952
Title :
A novel current sensor based on dual Hall chips
Author :
Xingguo Cheng ; Zongyang Zhang ; Fuan Li ; Sheng Liu
Author_Institution :
State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2012
fDate :
13-16 Aug. 2012
Firstpage :
1065
Lastpage :
1067
Abstract :
In this paper, a novel components model of dual-element combined with single air gap that produces a significant reduction in the sensor non-linearity and position errors is proposed. This design has improved anti-jamming capability and range of the sensor. A theoretical model for the current sensor output of the dual-element Hall voltage has also been established. In order to eliminate the ladder phenomenon in the frequency response of DC sensor, a dual-core current sensor program has also been proposed. Some factors that influences the magnetic properties of Hall current sensor has been evaluated using the finite element method (FEM). Theoretical analysis is consistent with experimental results, which indicates FEM is an effective tool for Hall current sensor design.
Keywords :
Hall effect transducers; finite element analysis; sensors; DC sensor; FEM; Hall current sensor design; dual hall chips; dual-core current sensor program; dual-element Hall voltage; finite element method; frequency response; jamming capability; ladder phenomenon; magnetic properties; position errors; single air gap; Abstracts; Interference; Reliability theory; Current sensor; Finite elements method; Modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
Type :
conf
DOI :
10.1109/ICEPT-HDP.2012.6474791
Filename :
6474791
Link To Document :
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