Absorption properties of the GaN/AlGaN multiple quantum wells grown on SiC substrate

GaN/AlGaN Quantum Wells (QWs) are attracting much attention because they enable the optical devices to operate at short wavelengths. To design optical devices that use these GaN/AlGaN QWs, we need to investigate their optical properties. Photoluminescence excitation (PLE) spectroscopy is useful for investigating the absorption properties of layered materials because information about the embedded layers can be obtained by tuning the monitoring wavelength to various luminescence lines. This paper reports the use of PLE spectroscopy with multiple monitoring wavelengths to evaluate the absorption properties of the MO-VPE grown GaN/A1GaN multiple quantum well (MQW). As far as the authors know, these are the first results of PLE measurement for the GaN/AlGaN QW structures.