Title :
Growth and fabrication of In/sub x/Ga/sub 1-x/N/GaN multiple quantum well and blue light emitting diodes
Author :
Kim, K.S. ; Oh, C.S. ; Lee, K.J. ; Kim, J.-H. ; Kim, Y.S. ; Yang, G.M. ; Hong, C.-H. ; Lim, K.Y. ; Lee, H.J.
Author_Institution :
Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Chonju, South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD) measurements, we study the crystal growth parameters affecting the qualities of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells (MQW), such as GaN barrier thickness, number of wells, doping in GaN barriers, and so on. Additionally, we fabricated blue LEDs using optimized MQW conditions and characterized their properties.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; barrier thickness; blue LED; crystal growth parameters; high resolution X-ray diffraction; multiple quantum well; photoluminescence; Fabrication; Fastbus; Gallium nitride; Light emitting diodes; Quantum well devices; Temperature; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.817920
