Title :
Effects of neutron irradiation at the interface of TiO/sub 2/ film on Si substrate
Author :
Zeng, L. ; Zhang, X. ; Kong, F.Q. ; Zhang, J.
Author_Institution :
Dept. of Phys., Yunnan Univ., Kunming, China
Abstract :
Summary form only given. TiO/sub 2/ films on Si (111) substrate were prepared by D.C. reaction sputter deposition followed by Ar/sup +/ ion beam bombardment. A layer-like structure with 2MeV neutrons irradiation to a dose of 10/sup 17/-10/sup 19/ cm/sup -2/ was observed at the interface between TiO/sub 2/ film and Si substrate with Scanning Electron Microscope and Electron Probe. The layer-like structure is a multi-layer structure consisting of bright and dark layers with different compositions. Ti element was detected at the deeper area about 15 /spl mu/m below surface. Defect diffusion, impurity and matrix relocation could be responsible for formations of the multi-layer structure and caused broadening of the TiO/sub 2/-Si interface.
Keywords :
argon; crystal defects; diffusion; electron probes; interface structure; ion beam effects; multilayers; neutron effects; scanning electron microscopy; sputter deposition; thin films; titanium compounds; 2 MeV; Ar; Ar/sup +/ ion beam bombardment; DC reaction sputter deposition; Si; Si (111) substrate; Si substrate; Ti element; TiO/sub 2/ film; TiO/sub 2/-Si; TiO/sub 2/-Si interface; bright layers; dark layers; defect diffusion; electron probe; impurity relocation; layer-like structure; matrix relocation; multilayer structure; neutron irradiation; scanning electron microscopy; Art; Electrons; Laser theory; Neutrons; Physics; Plasma density; Plasma x-ray sources; Semiconductor films; Substrates; X-ray lasers;
Conference_Titel :
Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-8334-6
DOI :
10.1109/PLASMA.2004.1339950
