Title :
Optical emission characteristics of GaAs and GaN structures using low temperature near-field scanning optical spectroscopy
Author :
Yong-Hoon Cho ; Eah, S.K. ; Hohng, S.C. ; Kim, D.S. ; Yang, G.M. ; Song, J.J. ; Jhe, W.
Author_Institution :
Center for Near-Atom-Photon Technol., Seoul Nat. Univ., South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Summary form only given, as follows. In this study, we present the results of optical studies of GaAs- and GaN-related structures using LT-NSOM. The optical properties were investigated over the temperature range of 4 to 300 K by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy using a single excitation source, combined with photo-modulated reflectance (PR) spectroscopy using separate pump and probe sources.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; near-field scanning optical microscopy; photoluminescence; photoreflectance; time resolved spectra; wide band gap semiconductors; 4 to 300 K; GaAs; GaN; LT-NSOM; PL excitation; low temperature near-field scanning optical spectroscopy; optical emission characteristics; optical properties; photo-modulated reflectance; photoluminescence; pump/probe sources; time-resolved PL spectroscopy; Gallium arsenide; Gallium nitride; Laser excitation; Optical fiber polarization; Optical fibers; Optical pumping; Pump lasers; Spectroscopy; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.817940
