Warpage measurement of silicon wafers of various bonding areas

In the microelectronic packaging, the different function chips can be bonded with the silicon wafer by adhesive in chip-to-wafer (C2W) process, the area of the bonding zone may impact the warpage deformation of the silicon wafer, and the warpage of the silicon wafer is a critical factor which determines the reliability and quality of microelectronic devices and systems. Three-dimensional measurement of silicon wafer is crucial to microelectronic packaging quality and process control. In this paper, phase shift-based shadow moiré measurement system proposed before is applied to the current research. Adhesive Epotec 353ND is used in different bonding areas between silicon wafer and stainless steel sheet. In the same environment, the warpage deformation of the silicon wafer with three bonding areas are measured by the developed system. The results show that the bigger bonding area, the bigger the warpage, and the warpage occurred mainly in the center of silicon wafer.