Title :
The effect of the tunable thicknesses of quantum dot emitting layer in quantum-dot light-emitting diode
Author :
Zhou, Yidan ; Chen, Jing ; Qasim, Khan ; Lei, Wei
Author_Institution :
Display Res. Center, Southeast Univ., Nanjing, China
Abstract :
In this paper, the tunable thicknesses of quantum dot emitting layer were studied and QD-LEDs based on the optimum thickness of quantum dot layer were fabricated. From the experiment results, the maximum PL intensity is achieved at the spin-coating speed of 1000 r.p.m. The QD-LEDs based on the optimum thickness of quantum dot layer exhibit a low turn-on voltage of 3.1V.
Keywords :
light emitting diodes; photoluminescence; quantum dots; PL intensity; QD-LED; photoluminescence intensity; quantum dot emitting layer; quantum-dot light-emitting diode; tunable thickness effect; voltage 3.1 V; Color; Electroluminescence; Indium tin oxide; Light emitting diodes; Nanocrystals; Polymers; Quantum dots; quantum dot emitting layer; quantum-dot light-emitting diodes; tunable thicknesses;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316985
