DocumentCode :
3506542
Title :
Fabrication of small CNT emitters for high resolution X-ray source
Author :
Eom, Youngju ; Lee, Suwoong ; Won, Haena ; Kang, Jungsu ; Jnag, Jin ; Park, K.C.
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10-2 cm2 with current density over 500 mA/cm2. However, with small area (200 × 500 μm2 elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm2 and 8 mA emission current.
Keywords :
X-ray imaging; carbon nanotubes; current density; nanofabrication; nanopatterning; C; CNT emitter fabrication; RAP process; Si; current density; high resolution X-ray source; resist-assisted patterning process; silicon substrate; Carbon nanotubes; Current density; Electron emission; Fabrication; Scanning electron microscopy; Silicon; Substrates; CNT; RAP; high resolution; x-ray source;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316990
Filename :
6316990
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3506542
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